Manufacturing method of semiconductor device and semiconductor device
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United States of America Patent
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Jul 21, 2015
Grant Date -
Jul 2, 2015
app pub date -
Mar 17, 2015
filing date -
Sep 30, 2011
priority date (Note) -
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status (Latency Note)
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Abstract
According to one embodiment, a first core pattern is formed in a wiring portion on a process target film and a second core pattern, which is led out from the first core pattern and includes an opening, is formed in a leading portion on the process target film, a sidewall pattern is formed along an outer periphery of the first core pattern and the second core pattern and a sidewall dummy pattern is formed along an inner periphery of the opening of the second core pattern, the first core pattern and the second core pattern are removed, and the process target film is processed to transfer the sidewall pattern and the sidewall dummy pattern.
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