Methods of predicting unity gain frequency with direct current and/or low frequency parameters

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United States of America Patent

PATENT NO 9704763
SERIAL NO

14146143

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Abstract

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Various embodiments include approaches for predicting unity gain frequency in a MOSFET. In some cases, a method includes predicting a unity gain frequency (fT) in a MOSFET device in a manufacturing line, the method including: measuring a first set of in-line direct current (DC) parameters of the MOSFET on the manufacturing line at a first drain voltage (Vd1); extracting a transconductance (Gm) from the first set of in-line DC parameters as a function of a gate-voltage (Vg) and the first drain-voltage (Vd1); measuring a second set of in-line DC parameters of the MOSFET on the manufacturing line at a second drain voltage (Vd2); extracting a total gate capacitance (Cgg) from the second set of in-line DC parameters as a function of the gate-voltage (Vg); and predicting the unity gain frequency (fT) of the MOSFET based upon the extracted transconductance (Gm) and the extracted total gate capacitance (Cgg).

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Patent Owner(s)

  • GLOBALFOUNDRIES INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Dikshit, Amit A Bangalore, IN 2 0
Ethirajan, Tamilmani Bangalore, IN 13 40
Pandharpure, Shrinivas J Bangalore, IN 3 3
Subramanian, Vaidyanathan T Bangalore, IN 2 0
Watts, Josef S South Burlington, US 27 314

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