Nitride semiconductor device

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United States of America Patent

PATENT NO 9136347
APP PUB NO 20150187886A1
SERIAL NO

14311675

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Abstract

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Provided is a nitride semiconductor device including: a substrate having through via holes; first and second nitride semiconductor layers sequentially stacked on the substrate; drain electrodes and source electrodes provided on the second nitride semiconductor layer; and an insulating pattern provided on the second nitride semiconductor layer, the insulating pattern having upper via holes provided on the drain electrodes, wherein the through via holes are extended into the first and second nitride semiconductor layers and expose a bottom of each of the source electrodes.

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Patent Owner(s)

  • ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bae, Sung-Bum Daejeon, KR 17 68
Chang, Woojin Daejeon, KR 23 82
Ko, Sang Choon Daejeon, KR 39 292
Mun, Jae Kyoung Daejeon, KR 55 280
Park, Young Rak Daejeon, KR 21 135

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