METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Number of patents in Portfolio can not be more than 2000

United States of America Patent

APP PUB NO 20150187892A1
SERIAL NO

14416698

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

A method for manufacturing a semiconductor device is disclosed, comprising: forming a contact sacrificial layer on the substrate, etching the contact sacrificial layer to form a contact sacrificial pattern, wherein the contact sacrificial pattern covers the source region and the drain region and has a gate trench that exposes the substrate; forming a gate spacer and a gate stack structure in the gate trench; partially or completely etching off the contact sacrificial pattern that covers the source region and the drain region so as to form a source/drain contact trench; and forming a source/drain contact in the source/drain contact trench. By means of the double-layer contact sacrificial layer, the method for manufacturing a semiconductor device in accordance with the present invention effectively reduces the spacing between the gate spacer and the contact region and increases the area of contact region, thus effectively reducing the parasitic resistance of the device.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

Patent OwnerAddress
INSTITUTE OF MICROELECTRONICS CHINESE ACADEMY OF SCIENCES100029 BEIJING CITY CHAOYANG DISTRICT BEITUCHENG WEST ROAD NO 3 CHINESE ACADEMY OF SCIENCES INSTITUTE OF MICROELECTRONICS MUNICIPAL DISTRICT BEIJING CITY 100029

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Yin, Haizhou Poughkeepsie, US 241 2072
Zhang, Keke Liaocheng City, CN 13 53

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation