HETEROJUNCTION SOLAR CELL WITH EPITAXIAL SILICON THIN FILM AND METHOD FOR PREPARING THE SAME
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United States of America Patent
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Issued Date -
Jul 2, 2015
app pub date -
Dec 27, 2013
filing date -
Dec 27, 2013
priority date (Note) -
Abandoned
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Abstract
A heterojunction solar cell with an epitaxial silicon thin film and a method for preparing the same are revealed. Low-cost upgraded metallurgical grade silicon (UMG-Si) wafers have been used as the substrates to manufacture solar cells so as to reduce the amount of high-purity silicon materials used. First an epitaxial silicon thin film is disposed over a UMG-Si wafer. Then other layers such as an amorphous silicon thin film, a transparent conductive film, etc. are arranged to form a solar cell having heterojunction with an intrinsic thin-layer (HIT) structure. Due to reduce in using high-purity silicon materials, the manufacturing cost of the heterojunction solar cell with an epitaxial silicon thin film is significantly decreased.
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