Methods of forming a magnetic random access memory etch spacer and structures formed thereby

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United States of America Patent

PATENT NO 9318694
APP PUB NO 20150188033A1
SERIAL NO

14140758

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Abstract

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Methods of forming a memory device structure are described. Those methods may include forming a non-conductive spacer material on a top electrode of a magnetic tunnel junction structure, and then forming a highly selective material on the non-conductive spacer material of the magnetic tunnel junction prior to etching a bottom electrode of the magnetic tunnel junction.

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Patent Owner(s)

  • INTEL CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Golonzka, Oleg Beaverton, US 95 489
Lamborn, Daniel Hillsboro, US 1 4
Wiegand, Christopher Portland, US 30 178

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