Importance

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Abstract

Method for fabricating a structure comprising a monatomic layer of crystalline silicon upon an electrically insulating layer of crystalline silicon nitride in the β structural form, comprising the following steps:

A. providing a standalone Si (111) substrate, said substrate comprising a first face and a second main face;B. thermally treating the substrate so that the Si (111) surface is clean, i.e. non contaminated at an atomic level;C. thermally growing a crystalline silicon nitride layer in the 13 structural form on at least one face of said Si (111) substrate;D. thermally growing a crystalline silicon monatomic layer on the crystalline silicon nitride layer.

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First Claim