Methods of Processing Polysilicon-Comprising Compositions
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United States of America Patent
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Issued Date -
Jul 9, 2015
app pub date -
Jan 9, 2014
filing date -
Jan 9, 2014
priority date (Note) -
Abandoned
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Abstract
A method of processing a polysilicon-comprising composition comprises forming a first wall comprising at least one recess in polysilicon. A second wall comprising polysilicon is formed. Material other than polysilicon is deposited within the at least one recess and over the polysilicon of the second wall. The material is etched selectively relative to polysilicon to expose polysilicon of the second wall and to leave the material within the at least one recess in the first wall. The exposed polysilicon of the second wall is etched selectively relative to the material within the at least one recess in the first wall. Other methods are disclosed.
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