METHOD OF MANUFACTURING SOLID-STATE IMAGE SENSOR
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United States of America Patent
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Issued Date -
Jul 9, 2015
app pub date -
Dec 15, 2014
filing date -
Jan 8, 2014
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A method of manufacturing an image sensor includes forming a resist film with a thickness of not less than 7 μm on a substrate having an effective region including a pixel array region and a peripheral region, and a non-effective region, forming a resist pattern including first, second and third openings from the resist film, and implanting ions into the pixel array region through the first, second and third openings. The first opening is arranged in the effective region to implant the ions into the pixel array region, the third opening is arranged in the non-effective region, and at least a part of the second opening is arranged between the first opening and the third opening, and a minimum curvature radius of an edge of the second opening is larger than that of the third opening.
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