Nonvolatile semiconductor memory element, nonvolatile semiconductor memory, and method for operating nonvolatile semiconductor memory element
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United States of America Patent
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Feb 2, 2016
Grant Date -
Jul 9, 2015
app pub date -
Mar 16, 2015
filing date -
Aug 8, 2008
priority date (Note) -
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Abstract
According to an aspect of the present invention, there is provided a nonvolatile semiconductor memory element including: a semiconductor substrate including: a source region; a drain region; and a channel region; a lower insulating film that is formed on the channel region; a charge storage film that is formed on the lower insulating film and that stores data; an upper insulating film that is formed on the charge storage film; and a control gate that is formed on the upper insulating film, wherein the upper insulating film includes: a first insulting film; and a second insulating film that is laminated with the first insulating film, and wherein the first insulating film is formed to have a trap level density larger than that of the second insulating film.
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