Non-planar field effect transistor test structure and lateral dielectric breakdown testing method
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Sep 27, 2016
Grant Date -
Jul 16, 2015
app pub date -
Jan 14, 2014
filing date -
Jan 14, 2014
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
Disclosed are test structures and methods for non-planar field effect transistors. The test structures comprise test device(s) on an insulator layer. Each device comprises semiconductor fin(s). Each fin has a first portion comprising a pseudo channel region at one end and a second portion comprising a diffusion region positioned laterally adjacent to the first portion. A gate with sidewall spacers can be adjacent to the first portion of the fin(s). A first contact can be on the insulator layer adjacent the end of the fin(s). A second contact can be on the second portion of the fin(s) such that the gate is positioned laterally between the contacts. Measurements taken when the first contact is biased against the gate are compared to measurements taken when the second contact is biased against the gate in order to assess lateral dielectric breakdown between the gate and first contact independent of gate dielectric breakdown.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully