Non-volatile semiconductor memory device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9437301
SERIAL NO

14669407

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

According to one embodiment, a non-volatile semiconductor memory device comprises a memory cell array and a memory region. The memory cell array has a plurality of physical blocks. Each of the plurality of physical blocks includes a plurality of string units. Each string unit has a plurality of NAND strings that shares a plurality of word lines connected to a plurality of memory cells, respectively. The memory region is disposed to one of the plurality of physical blocks. Each of the plurality of string units configures a first logical block, and when the first logical block is failed, information of the first failed logical block is stored in a first region of the memory region.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Shirakawa, Masanobu Chigasaki, JP 261 1656

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation

Maintenance Fees

Fee Large entity fee small entity fee micro entity fee due date
7.5 Year Payment $3600.00 $1800.00 $900.00 Mar 6, 2024
11.5 Year Payment $7400.00 $3700.00 $1850.00 Mar 6, 2028
Fee Large entity fee small entity fee micro entity fee
Surcharge - 7.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge - 11.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge after expiration - Late payment is unavoidable $700.00 $350.00 $175.00
Surcharge after expiration - Late payment is unintentional $1,640.00 $820.00 $410.00