SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME
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United States of America Patent
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Issued Date -
Jul 16, 2015
app pub date -
Mar 11, 2014
filing date -
Jan 10, 2014
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
According to one embodiment, a semiconductor memory device includes a substrate, a semiconductor pillar provided on the substrate to extend in a vertical direction, a plurality of first electrode films provided sideward of the semiconductor pillar to extend in a first direction. The plurality of first electrode films are disposed to be separated from each other along the vertical direction. The semiconductor memory device further includes a plurality of second electrode films provided between the semiconductor pillar and the first electrode films. The plurality of second electrode films are disposed to be separated from each other along the vertical direction. The semiconductor memory device further includes a first insulating film provided between the semiconductor pillar and the second electrode films, and a second insulating film provided between the second electrode film and the first electrode film.
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