Drain Extended MOS Transistors With Split Channel
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United States of America Patent
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app pub date -
Sep 24, 2014
filing date -
Jan 10, 2014
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Abandoned
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Abstract
A circuit including both drain-extended metal-oxide-semiconductor (DEMOS) and low-voltage metal-oxide-semiconductor (LV_MOS) devices and methods of manufacturing the same are provided. In one embodiment, DEMOS device includes a first channel, a gate, a second channel, and a drain extension, wherein the second channel is split into a first portion and a second portion, and wherein the first portion of the second channel stops under the gate and is spaced away from the drain extension. Other embodiments are also described.
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