Semiconductor storage device
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United States of America Patent
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Dec 29, 2015
Grant Date -
Jul 16, 2015
app pub date -
Mar 7, 2014
filing date -
Jan 10, 2014
priority date (Note) -
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Abstract
A semiconductor storage device according to the present embodiment includes a semiconductor substrate. A tunnel insulating film is provided on the semiconductor substrate. A charge accumulation layer is provided on the tunnel insulating film. An intermediate dielectric film is provided on the charge accumulation layer. A control gate electrode is formed on the intermediate dielectric film. The intermediate dielectric film includes a laminated film of silicon oxide films of multiple layers and silicon nitride films of at least one layer, and a silicon oxynitride film provided between adjacent ones of the silicon oxide films and the silicon nitride films.
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