Avoiding internal switching loss in soft switching cascode structure device
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United States of America Patent
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Aug 15, 2017
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app pub date -
Aug 28, 2014
filing date -
Jan 15, 2014
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Abstract
In a cascode switching device, avalanche breakdown of a control transistor and loss of soft switching or zero voltage switching in a high voltage normally-on depletion mode transistor having a negative switching threshold voltage and the corresponding losses are avoided by providing additional capacitance in parallel with a parallel connection of drain-source parasitic capacitance of the control transistor and gate-source parasitic capacitance of the high voltage, normally-on transistor to form a capacitive voltage divider with the drain-source parasitic capacitance of the high voltage, normally-on transistor such that the avalanche breakdown voltage of the control transistor cannot be reached. The increased capacitance also assures that the drain source parasitic capacitance of the high voltage, normally-on transistor is fully discharged before internal turn-on can occur.
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