LIQUID ETCHANT COMPOSITION, AND ETCHING PROCESS IN CAPACITOR PROCESS OF DRAM USING THE SAME
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Jul 23, 2015
app pub date -
Jan 17, 2014
filing date -
Jan 17, 2014
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
An etching process in a capacitor process for DRAM is described. A substrate is provided, which has thereon a silicon layer and metal electrodes in the silicon layer. The silicon layer is removed using a liquid etchant composition. The liquid etchant composition contains tetramethylammonium hydroxide (TMAH), an additive including hydroxylamine or a metal corrosion inhibitor, and water as a solvent.
First Claim
Family
International Classification(s)
- [Classification Symbol]
- [Patents Count]
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully