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United States of America Patent

SERIAL NO

14670086

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Abstract

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In a photoelectric conversion panel, a plurality of TFTs are formed over an insulating substrate. The TFTs are covered by a first planarizing film. A plurality of photodiodes are formed over the first planarizing film. The photodiodes and the first planarizing film are covered by a second planarizing film. A scintillator contains cesium iodide and is directly vapor-deposited over the photoelectric conversion panel. The scintillator is formed in an area, over the second planarizing film, extending to the outside of an area in which the TFTs and the photodiodes are formed and located inside edges of the first and second polarizing films.

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Patent Owner(s)

Patent OwnerAddress
FUJIFILM CORPORATION26-30 NISHIAZABU 2-CHOME MINATO-KU TOKYO 106-8620

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
NAKATSUGAWA, Haruyasu Ashigarakami-gun, JP 225 1201
OKADA, Yoshihiro Ashigarakami-gun, JP 195 2053

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