Determining and storing bit error rate relationships in spin transfer torque magnetoresistive random-access memory (STT-MRAM)
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United States of America Patent
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Aug 16, 2016
Grant Date -
Jul 23, 2015
app pub date -
Jan 21, 2014
filing date -
Jan 21, 2014
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Abstract
Systems and methods to manage memory on a spin transfer torque magnetoresistive random-access memory (STT-MRAM) are provided. A particular method may include determining a performance characteristic using relationship information that relates a bit error rate to at least one of a programming pulse width, a temperature, a history-based predictive performance parameter, a coding scheme, and a voltage level also associated with a memory. The performance characteristic is stored and used to manage a write operation associated with the memory.
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