Gate contact with vertical isolation from source-drain
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United States of America Patent
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Sep 29, 2015
Issued Date -
N/A
app pub date -
Jan 23, 2014
filing date -
Jan 23, 2014
priority date (Note) -
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Abstract
A method of forming a semiconductor structure includes forming a gate structure having a first conductive material above a semiconductor substrate, gate spacers on opposing sides of the first conductive material, and a first interlevel dielectric (ILD) layer surrounding the gate spacers and the first conductive material. An upper portion of the first conductive material is recessed. The gate spacers are recessed until a height of the gate spacers is less than a height of the gate structure. An isolation liner is deposited above the gate spacers and the first conductive material. A portion of the isolation liner is removed so that a top surface of the first conductive material is exposed. A second conductive material is deposited in a contact hole created above the first conductive material and the gate spacers to form a gate contact.
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