Apparatus for atomic layering etching
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United States of America Patent
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Dec 11, 2013
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Jul 20, 2011
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Abstract
A substrate processing system having a processing chamber for etching a layer on a substrate is provided. The system includes a chuck upon which the substrate is disposed during etching. The system also includes the chamber being divided into a plasma generating region and a substrate processing region by a separating plate structure. The system further includes a plasma source for generating plasma in the plasma generating region. The system further includes logic for introducing a first gas into the chamber, wherein the gas is suitable for etching the layer. The logic also allows the first gas to be present in the chamber for a period of time sufficient to cause adsorption of at least some of the first gas into the layer. The logic further replaces the first gas with an inert gas, generates metastables from the inert gas, and etches the layer with the metastables.
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