SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
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United States of America Patent
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Jul 7, 2015
Grant Date -
Jul 23, 2015
app pub date -
Sep 5, 2014
filing date -
Jan 23, 2014
priority date (Note) -
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status (Latency Note)
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Abstract
According to one embodiment, there is provided a semiconductor device using graphene, includes a catalyst layer formed on or in a substrate along with an interconnect pattern and a graphene layer formed on the catalyst layer. The graphene layer is arranged parallel to a narrower linewidth than the width of the interconnect pattern.
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