IMPLEMENTING BURIED FET BELOW AND BESIDE FINFET ON BULK SUBSTRATE
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United States of America Patent
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app pub date -
Mar 28, 2015
filing date -
Dec 2, 2013
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Abstract
A method and circuit for implementing an enhanced transistor topology enabling enhanced current capability with added device drive strength with buried field effect transistors (FETs) below and beside a traditional FinFET on a bulk substrate, and a design structure on which the subject circuit resides are provided. Buried field effect transistors (FETs) are formed on either side and under the traditional FinFET. The gate of the FinFET becomes the gate of the parallel buried (FETs) and allows self alignment to the underlying sources and drains of the buried FET devices in the bulk semiconductor.
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