SEMICONDUCTOR LIGHT EMITTING STRUCTURE
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United States of America Patent
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Issued Date -
Jul 23, 2015
app pub date -
Jun 13, 2014
filing date -
Jan 23, 2014
priority date (Note) -
Abandoned
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Abstract
A semiconductor light emitting structure is provided. The semiconductor light emitting structure comprises a substrate, a first semiconductor layer, an active layer and a second semiconductor layer. The first semiconductor layer is formed on the substrate. The active layer is formed on a portion of the first semiconductor layer, and the other portion of the first semiconductor layer is exposed and used as a first electrode predetermined area. The second semiconductor layer is formed on the active layer. The second semiconductor layer has a second electrode predetermined area and a micro-structure predetermined area disposed thereon. The micro-structure predetermined area comprises a plurality of concaves and a plurality of protrusions, and each protrusion is correspondingly located within one of the concaves.
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