Film bulk acoustic wave resonator (FBAR) having stress-relief

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United States of America Patent

PATENT NO 9608592
SERIAL NO

14159518

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Abstract

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An acoustic resonator structure comprises: a substrate having a cavity, which has a plurality of sides; a first electrode disposed over the cavity; a piezoelectric layer disposed over a portion of the first electrode and extending over at least one of the sides; and a second electrode disposed over the piezoelectric layer, an overlap of the first electrode, the piezoelectric layer and the second electrode forming an active area of the FBAR. The active area of the FBAR is completely suspended over the cavity.

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Patent Owner(s)

  • AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bi, Frank Fort Collins, US 8 148
Ruby, Richard C Menlo Park, US 126 6836
Small, Martha K Fort Collins, US 8 115
Sridaran, Suresh Fort Collins, US 11 112

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