Importance

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Abstract

A semiconductor device is disclosed, which comprises: a memory cell, first and second bit lines, a switch between the first and second bit lines, a sense amplifier, a sense amplifier driving circuit driving the sense amplifier with first and second voltages, a precharge circuit precharging the first bit line, and a control circuit. The control circuit performs a read operation so that the first and second bit lines are disconnected from each other and the first bit line is precharged to a precharge voltage, during a first period. Thereafter, the control circuit performs a restoring operation in a state where the first and second bit lines are connected to each other and the precharging of the first bit line is cancelled, during a second period after the first period. The sense amplifier is driven with the second voltage for increasing its driving ability during the second period

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First Claim