TECHNIQUES FOR ION IMPLANTATION OF NARROW SEMICONDUCTOR STRUCTURES
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United States of America Patent
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Issued Date -
Jul 30, 2015
app pub date -
Jan 24, 2014
filing date -
Jan 24, 2014
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Abstract
A method to process a semiconductor device includes performing a first ion implant comprising first ions into a thin crystalline semiconductor structure, the first ion dose amorphizing a first region of the thin crystalline semiconductor structure; performing a second ion implant comprising dopant ions of a dopant species into at least the first region of the thin crystalline semiconductor structure; and performing at least one anneal of the semiconductor device after the first implant, wherein after the first and second implant and the at least one anneal, the thin crystalline semiconductor structure forms a mono-crystalline region without defects.
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