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Abstract

The epitaxial wafer includes a silicon substrate, an aluminum nitride thin film feeing a main surface of the silicon substrate, and an aluminum deposit between the silicon substrate and the aluminum nitride thin film so as to inhibit formation of silicon nitride. In the method for producing the epitaxial wafer, to form the aluminum deposit on the main surface of the silicon substrate, trimethyl aluminum is supplied into a reactor after a substrate temperature defined as a temperature of the silicon substrate is adjusted to a first predetermined temperature equal to or mare than. 300° C. and less than 1200° C. Thereafter, to form the aluminum nitride thin film facing the main surface of the silicon substrate, trimethyl aluminum and ammonia are supplied into the reactor after the substrate temperature is adjusted to a second predetermined temperature equal to or more than 1200° C. and equal to or less than 1400° C.

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First Claim