SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SAME
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United States of America Patent
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Issued Date -
Aug 6, 2015
app pub date -
Jan 26, 2015
filing date -
Feb 3, 2014
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Abstract
A semiconductor device and a manufacturing method for the same are provided in such a manner that the oxygen barrier film and the conductive plug in the base of a capacitor are prevented from being abnormally oxidized. A capacitor is formed by layering a lower electrode, a dielectric film including a ferroelectric substance or a high dielectric substance, and an upper electrode in this order on top of an interlayer insulation film with at least a conductive oxygen barrier film in between, and at least a portion of a side of the conductive oxygen barrier film is covered with an oxygen entering portion or an insulating oxygen barrier film.
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