Metal semiconductor alloy contact resistance improvement
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United States of America Patent
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Sep 20, 2016
Grant Date -
Aug 6, 2015
app pub date -
Feb 4, 2014
filing date -
Feb 4, 2014
priority date (Note) -
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Abstract
Contact openings are formed into a dielectric material exposing a surface portion of a semiconductor substrate. A first transition metal liner including at least one first transition metal element, a second transition metal liner including at least one second transition metal element that is different from the at least one first transition metal element and a metal contact are sequentially formed within each contact opening. Following a planarization process, the structure is annealed forming metal semiconductor alloy contacts at the bottom of each contact opening. Each metal semiconductor alloy contact that is formed includes the at least one first transition metal element, the at least one second transition metal element and a semiconductor element.
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