SiC SINGLE CRYSTAL PRODUCTION APPARATUS AND METHOD OF PRODUCING SiC SINGLE CRYSTALS

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United States of America Patent

APP PUB NO 20150225871A1
SERIAL NO

14424538

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Abstract

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A SiC single crystal production apparatus is used in production of SiC single crystals by solution growth techniques. The apparatus includes: a seed shaft having a lower end surface to which a SiC seed crystal is to be attached; a crucible that contains a Si—C solution; a stirring member that is immersed in the Si—C solution; and drive sources that cause relative rotation between the crucible and the stirring member. The lower end of the stirring member is located lower than the lower end of the SiC seed crystal attached to the lower end surface of the seed shaft.

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Patent Owner(s)

Patent OwnerAddress
TOYOTA JIDOSHA KABUSHIKI KAISHA1 TOYOTA-CHO TOYOTA-SHI AICHI-KEN 471-857
NIPPON STEEL & SUMITOMO METAL CORPORATIONTOKYO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Daikoku, Hironori Susono-shi, JP 31 39
Kado, Motohisa Gotemba-shi, JP 19 22
Kamei, Kazuhito Kitakyushu-shi, JP 38 152
Kusunoki, Kazuhiko Nishinomiya-shi, JP 39 97
Moriguchi, Koji Nishinomiya-shi, JP 18 110
Okada, Nobuhiro Kisarazu-shi, JP 40 97
Sakamoto, Hidemitsu Susono-shi, JP 20 40
Yashiro, Nobuyoshi Itami-shi, JP 15 63

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