SiC SINGLE CRYSTAL PRODUCTION APPARATUS AND METHOD OF PRODUCING SiC SINGLE CRYSTALS
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United States of America Patent
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Issued Date -
Aug 13, 2015
app pub date -
Sep 2, 2013
filing date -
Sep 4, 2012
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Abstract
A SiC single crystal production apparatus is used in production of SiC single crystals by solution growth techniques. The apparatus includes: a seed shaft having a lower end surface to which a SiC seed crystal is to be attached; a crucible that contains a Si—C solution; a stirring member that is immersed in the Si—C solution; and drive sources that cause relative rotation between the crucible and the stirring member. The lower end of the stirring member is located lower than the lower end of the SiC seed crystal attached to the lower end surface of the seed shaft.
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