Reference voltage modification in a memory device
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United States of America Patent
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May 24, 2016
Grant Date -
Aug 13, 2015
app pub date -
Apr 23, 2015
filing date -
May 8, 2013
priority date (Note) -
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Abstract
A method and apparatus for modifying a reference voltage between refreshes in a memory device are disclosed. The memory array may include a plurality of memory cells. The memory device may also include a sense amplifier. The sense amplifier may be configured to read data from the plurality of memory cells using a reference voltage. The memory device may also include a sense amplifier reference voltage modification circuit. The sense amplifier reference voltage modification circuit may be configured to detect a triggering event and modify the reference voltage in response to detecting a triggering event.
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