METHOD AND APPARATUS FOR THREE DIMENSIONAL ION IMPLANTATION

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United States of America Patent

APP PUB NO 20150228445A1
SERIAL NO

14179988

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Abstract

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A scan system for processing a substrate with an ion beam may include a scanner to receive the ion beam having a shape of a ribbon beam, the ribbon beam having a beam width along a first axis and beam height along a second axis that is perpendicular to the first axis, the beam width being at least three times greater than the beam height; and a scan power supply to send signals to the scanner to generate a deflecting field that deflects the ribbon beam along the second axis.

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Patent Owner(s)

Patent OwnerAddress
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES INC35 DORY ROAD GLOUCESTER MA 01930

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Shengwu South Hamilton, US 38 136

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