INTEGRATED CIRCUIT DEVICE AND METHOD FOR MANUFACTURING SAME
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United States of America Patent
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Issued Date -
Aug 13, 2015
app pub date -
Jul 1, 2014
filing date -
Feb 12, 2014
priority date (Note) -
Abandoned
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Abstract
A method for manufacturing an integrated circuit device according to the embodiment includes forming a silicon film on a first insulating film, making a plurality of trenches to pierce the silicon film by etching the silicon film, forming a plurality of interconnects by filling a metal material into the trenches, removing the silicon film, and forming a second insulating film on the plurality of interconnects without filling a gap between the interconnects.
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