SiGe and Si FinFET structures and methods for making the same
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United States of America Patent
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Jul 12, 2016
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app pub date -
Feb 10, 2014
filing date -
Feb 10, 2014
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Abstract
FinFET structures and methods for making the same. A method includes: creating a plurality of Silicon fins on a first region of a substrate, creating a plurality of Silicon-Germanium fins on a second region of the substrate, adjusting a Silicon fin pitch of the plurality of Silicon fins to a predetermined value, and adjusting a Silicon-Germanium fin pitch of the plurality of Silicon-Germanium fins to a predetermined value, where the creating steps are performed in a manner that Silicon material and Silicon-Germanium material used in making the plurality of fins will be on the semiconductor structure at a same time.
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