Enabling bulk FINFET-based devices for FINFET technology with dielectric isolation
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United States of America Patent
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Dec 8, 2015
Grant Date -
Aug 13, 2015
app pub date -
Feb 27, 2014
filing date -
Feb 11, 2014
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Abstract
A method for forming a dielectric-isolated bulk fin field-effect transistor (finFET) device includes forming a second isolation layer over a first structure including multiple partially exposed fins and horizontal areas including a first isolation layer. The second isolation layer is removed from horizontal areas of a first portion of the first structure. An oxide layer is formed under the fins of the first portion of the first structure. The second isolation layer is removed in order to expose the partially exposed fins and horizontal areas of the first structure to form a second structure, on which gate regions are formed.
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