Semiconductor device manufacturing method, and photoelectric conversion device
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United States of America Patent
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Jan 31, 2017
Grant Date -
Aug 13, 2015
app pub date -
Feb 10, 2015
filing date -
Feb 13, 2014
priority date (Note) -
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Abstract
A semiconductor device manufacturing method includes a step of forming a hole reaching a first insulating layer over a first conductive member; a step of forming a trench reaching a second insulating layer and in communication with the hole; a step of forming an opening exposing the first conductive member in the hole; and a step of forming a second conductive member connected to the first conductive member by embedding a conductive material in the opening, the hole, and the trench. The trench is formed under an etching condition such that the etching rate with respect to the second insulating layer is lower than the etching rate with respect to the third insulating layer.
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