Side gate assist in metal gate first process
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United States of America Patent
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Jun 20, 2017
Grant Date -
Aug 13, 2015
app pub date -
Feb 12, 2014
filing date -
Feb 12, 2014
priority date (Note) -
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Abstract
A method of making a semiconductor device in a gate first process with side gate assists. A first gate may be formed within a gate region. The first gate may include a first gate conductor separated from a semiconductor substrate by a first insulator disposed between the first gate conductor and the semiconductor substrate. A second gate may be formed within the gate region. The second gate may include a second gate conductor separated from a vertical surface of the first gate conductor and the semiconductor substrate by a second insulator. A first electrical contact and a second electrical contact may be formed. The first and second electrical contacts may be disposed on opposite ends of the gate region for respectively connecting the first gate conductor and the second gate conductor to a respective voltage.
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