On-chip diode with fully depleted semicondutor devices
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United States of America Patent
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Jan 19, 2016
Grant Date -
Aug 20, 2015
app pub date -
May 6, 2015
filing date -
Nov 15, 2012
priority date (Note) -
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Abstract
An electrical device including a first conductivity semiconductor device present in a first semiconductor device region of an SOI substrate, and a second conductivity semiconductor device present in a second semiconductor device region of the SOI substrate. The electrical device also includes a diode present within a diode region of the SOI substrate that includes a first doped layer of a first conductivity semiconductor material that is present on an SOI layer of the SOI substrate. The first doped layer includes a first plurality of protrusions extending from a first connecting base portion. The semiconductor diode further includes a second doped layer of the second conductivity semiconductor material present over the first doped layer. The second doped layer including a second plurality of protrusions extending from a second connecting base portion. The second plurality of protrusions is present between and separating the first plurality of protrusions.
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