SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
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United States of America Patent
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Issued Date -
Aug 20, 2015
app pub date -
Sep 20, 2013
filing date -
Sep 26, 2012
priority date (Note) -
Abandoned
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Abstract
Disclosed herein is a semiconductor device that includes: a semiconductor substrate; a well of a first conductive type that is formed in the semiconductor substrate; an element isolation region embedded in the semiconductor substrate so as to define an active region of the well; first and second gate electrodes each including a side surface and a bottom surface that are covered with the well such that the first and second gate electrodes are formed to traverse the active region, and a peak depth of the well corresponding to the active region is equal to or shallower than a peak depth of the well corresponding to the element isolation region.
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