TRANSISTOR WITH REDUCTED PARASITIC
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United States of America Patent
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Issued Date -
Aug 20, 2015
app pub date -
Feb 14, 2014
filing date -
Feb 14, 2014
priority date (Note) -
Abandoned
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Abstract
Parasitic thyristor action may be mitigated in semiconductor devices by placement of minority carrier traps, illustratively in the base(s) of bipolar transistors or the well of a CMOS transistor pair. The minority carrier traps include adjacent n and p regions which may be connected by a conductor.
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