Semiconductor device and method of manufacturing the same

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United States of America Patent

PATENT NO 9793354
SERIAL NO

14619306

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Abstract

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A semiconductor device according to an embodiment includes: a first electrode; a SiC semiconductor layer including n-type semiconductor; and a second electrode including a SiC metallic region made of metal in contact with the SiC semiconductor layer, the SiC metallic region provided on a side of the SiC semiconductor layer opposite to the first electrode, the SiC metallic region containing at least one element selected from the group of Mg (magnesium), Ca (calcium), Sr (strontium), Ba (barium), Sc (scandium), Y (yttrium), La (lanthanum), and lanthanoid (Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu).

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Patent Owner(s)

  • KABUSHIKI KAISHA TOSHIBA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Iijima, Ryosuke Setagaya, JP 92 216
Shimizu, Tatsuo Shinagawa, JP 285 2226
Shinohe, Takashi Yokosuka, JP 168 1543

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