Nitride-based semiconductor device and method of manufacturing the same

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United States of America Patent

PATENT NO 10453926
APP PUB NO 20150236103A1
SERIAL NO

14704139

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Abstract

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The nitride-based semiconductor device includes a carrier traveling layer 1 composed of non-doped AlxGa1-xN (0≤X<1); a barrier layer 2 formed on the carrier traveling layer 1 and composed of non-doped or n-type AlYGa1-YN (01; a threshold voltage control layer 3 formed on the barrier layer 2 and composed of a non-doped semiconductor having a lattice constant equal to that of the carrier traveling layer 1; and a carrier inducing layer 4 formed on the threshold voltage control layer 3 and composed of a non-doped or n-type semiconductor having a lattice constant smaller than that of the carrier traveling layer 1. The nitride-based semiconductor device further includes a gate electrode 5 formed in a recess structure, a source electrode 6 and a drain electrode 7.

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Patent Owner(s)

  • KABUSHIKI KAISHA TOSHIBA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kuraguchi, Masahiko Kanagawa, JP 93 721

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