Ambipolar synaptic devices

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United States of America Patent

PATENT NO 9472641
SERIAL NO

14684343

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Abstract

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Device architectures based on trapping and de-trapping holes or electrons and/or recombination of both types of carriers are obtained by carrier trapping either in near-interface deep ambipolar states or in quantum wells/dots, either serving as ambipolar traps in semiconductor layers or in gate dielectric/barrier layers. In either case, the potential barrier for trapping is small and retention is provided by carrier confinement in the deep trap states and/or quantum wells/dots. The device architectures are usable as three terminal or two terminal devices.

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Patent Owner(s)

  • IBM CORPORATION

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Afzali-Ardakani, Ali Ossining, US 281 3228
Chen, Tze-Chiang Yorktown Heights, US 102 1417
Gopalakrishnan, Kailash San Jose, US 86 968
Hekmatshoartabari, Bahman White Plains, US 389 1809

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