Mask manufacturing method, mask substrate, and charged beam drawing method

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United States of America Patent

PATENT NO 9581893
APP PUB NO 20150241767A1
SERIAL NO

14566585

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Abstract

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A manufacturing method of a phase shift mask in an embodiment includes: forming a metal layer on a substrate, the metal layer having a first region and a second region, the first region being configured to emit secondary electrons by irradiation with electrons, the second region being configured to emit secondary electrons higher in density than the first region, by the irradiation with electrons; patterning the metal layer to form a main pattern in the first region and an alignment mark in the second region; forming a resist layer on the patterned metal layer; and aligning the substrate using a secondary electron image of the alignment mark.

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Patent Owner(s)

  • NUFLARE TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Anze, Hirohito Kamakura, JP 13 166

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