SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

Number of patents in Portfolio can not be more than 2000

United States of America Patent

APP PUB NO 20150243654A1
SERIAL NO

14422053

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

The present invention provides a method for manufacturing a semiconductor structure, which comprises: a) forming gate lines extending along one direction on a substrate; b) forming a photoresist layer that covers the semiconductor structure; patterning the photoresist layer to form openings that span over the gate lines: c) implanting ions into the gate lines, such that the gate lines are insulated at the openings. The present invention enables the gate lines to maintain complete shape at formation of electrically isolated gates, which will not cause defects that exist in the prior art when forming a dielectric layers at subsequent steps, thereby guaranteeing performance of semiconductor devices. Additionally, the present invention further provides a semiconductor structure manufactured according to the method provided by the present invention.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

Patent OwnerAddress
INSTITUTE OF MICROELECTRONICS CHINESE ACADEMY OF SCIENCES100029 BEIJING CITY CHAOYANG DISTRICT BEITUCHENG WEST ROAD NO 3 CHINESE ACADEMY OF SCIENCES INSTITUTE OF MICROELECTRONICS MUNICIPAL DISTRICT BEIJING CITY 100029

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Liang, Qingqing Lagrangeville, US 158 1676
Zhao, Chao Kessel-lo, BE 100 372
Zhong, Huicai San Jose, US 106 985

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation