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Abstract

A method for producing a semiconductor laser diode is specified, comprising the following steps:—epitaxial iv growing a semiconductor layer sequence (2) having at least one active layer (3) on a growth substrate (1)—forming a front facet (5) on the semiconductor layer sequence (2) and the growth. substrate (1), wherein the front facet (5) is designed as a main. emission surface having a light emission region (6) for the laser light (30) generated in the completed semiconductor laser diode,—forming a coupling-out coating (9) on a second part (52) of the front facet (5), wherein the first. part (51) and the second part (52) are arranged at least partly alongside one another in a direction parallel to the front facet (5) and along a growth direction of the semiconductor layer sequence (2), such that the first part (51) is at least partly free of the coupling-out coating (9) and the second part (52) is at least partly free of the light blocking layer (8), and wherein the second part (52) has the light exit region (6),—forming a light blocking layer (8) on a first part (51) of the front facet (5). Furthermore, a semiconductor laser diode is specified.

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First Claim