SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME
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United States of America Patent
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Issued Date -
Sep 3, 2015
app pub date -
May 15, 2015
filing date -
Feb 27, 2013
priority date (Note) -
Abandoned
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Abstract
According to one embodiment, a semiconductor memory device includes a semiconductor member, a first insulating layer provided on the semiconductor member, a TaN layer provided on the first insulating layer and containing tantalum and nitrogen, a TaSiN layer provided on the TaN layer in contact with the TaN layer and containing tantalum, silicon, and nitrogen, a second insulating layer provided on the TaSiN layer in contact with the TaSiN layer and containing oxygen, and a control electrode provided on the second insulating layer.
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