Pre-patterned hard mask for ultrafast lithographic imaging

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United States of America Patent

PATENT NO 9285682
APP PUB NO 20150253667A1
SERIAL NO

14642328

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Abstract

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A method of fabricating a substrate including coating a first resist onto a hardmask, exposing regions of the first resist to electromagnetic radiation at a dose of 10.0 mJ/cm2 or greater and removing a portion of said the and forming guiding features. The method also includes etching the hardmask to form isolating features in the hardmask, applying a second resist within the isolating features forming regions of the second resist in the hardmask, and exposing regions of the second resist to electromagnetic radiation having a dose of less than 10.0 mJ/cm2 and forming elements.

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Patent Owner(s)

  • INTEL CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bristol, Robert L Portland, US 59 778
Nyhus, Paul A Portland, US 45 547
Wallace, Charles H Portland, US 135 1004

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